SemiconductorN DMOS Transistor
This type of block represents a double-diffused MOS transistor (DMOS). A DMOS is a MOS-gated semiconductor device that differs from the plain MOSFET by the lightly-doped drift region between the channel region and the drain. There exist both vertical and lateral versions of this device, of which the vertical has the greater current-carrying capability and is mainly used as a discrete device in high-power applications, while the lateral type serves as an output driver in high-voltage and power ICs. The present model applies to both device types.
However, the present model does not include the drift region of the DMOS, and thus the so-called quasi-saturation or JFET effect is not modelled. This effect reduces the gate voltage control of the drain current at high gate and drain voltages and produces the 'bunching together' of the higher curves in the DMOS Ids - Vds - characteristics.
The characteristics of the DMOS depend on the chosen model. See the vendor's web page for more details about a specific DMOS model.
See also